Silicon Nitride (Si3N4)

Properties

• Crystal structure: hexagonal (amorphous for most VLSI applications)
• Atomic Weight 140.28
• Thermal Conductivity 16-33 W/m-K
• Thermal diffusivity .32 cm**2/s
• Relative Dielectric Constant 7.5
• Index of Refraction 2.0
• Dielectric Constant F/m
• Electrical Resistivity > 10e12 ohm-meter
• Breakdown field V/m
• Atomic Density 1.48e22 molecules/cm**3
• Density 3.44 g/cm**3
• Coefficient of Thermal Linear Expansion 2.8e-6 to 3.6e-6 /K
• Energy Gap 4.7 eV
• Specific Heat .17 J/g-K
• Melting point ~1900 C
• Young's Modulus 304 GPa
• Poisson's Ratio .24
• Koop Hardness 2200
• Modulus of Rupture 414-580 MPa

Etchants