Silicon Etchants
From Ghandhi, SK, VLSI Fabrication Principles, Wiley, 1983
Polishing Etches
- CP-4A 80 microns/min
- 3 ml Hydrofluoric Acid
- 5 ml Nitric Acid
- 3 ml Glacial Acetic Acid
- Planar Etch 3 microns/min
- 2 ml Hydrofluoric Acid
- 15 ml Nitric Acid
- 3 ml Glacial Acetic Acid
- almost neutral etch 0.7 microns/min
- 10 ml Hydrogen Peroxide
- 3.7 g Ammonium Fluoride
- 2 ml Hydrofluoric Acid
- 1 ml Potassium Permanganate (6%)
- 0.3 - 0.4 microns/min
- 50 ml Hydrofluoric Acid
- 100 ml Nitric Acid
- 150 Glacial Acetic Acid
- 3 g Iodine
Buffered Etches for Silicon Dioxide
- buffered oxide etch (BHF) 1000-2500 A/min at 25C
- 28 ml Hydrofluoric Acid
- 113 g Ammonium Fluoride
- 170 ml DI Water
- Slow BHF 800 A/min at 25C
- P-etch, 128 A/min at 25C
- 15 ml Hydrofluoric Acid
- 10 ml Nitric Acid
- 300 ml DI Water
Crystallographic Etches for Silicon
- Dash Etch, 8 h
- 1 ml Hydrofluoric Acid
- 1 ml Nitric Acid
- 10 ml Glacial Acetic Acid
- Sirtl Etch for <111> Silicon
- 1 ml Hydrofluoric Acid
- 1 ml Chromium Trioxide (5 molar in water)
- Secco etch for <100> and <111> silicon, 5 min
- 2 ml Hydrofluoric Acid
- 1 ml Potassium Chromate (0.15 molar in water)
- Wright Etch for <100> and <111> silicon, 5 min, long shelf life
- 60 ml Hydrofluoric Acid
- 30 ml Nitric Acid
- 60 ml Glacial Acetic Acid
- 60 ml DI water
- 30 ml of solution of 1 g Potassium Chromate in 2 ml of water
- 2 g Copper Nitrate (Cu NO3)2. 3H2O
- Silver Etch, for faults in Epitaxial layers
- 2 ml Hydrofluoric Acid
- 1 ml Nitric Acid
- 2 ml Silver Nitrate (0.65 molar in water)
- for p-n junction delineation, 1 min
- 200 ml Hydrofluoric Acid
- 1 ml Nitric Acid
Cleaning Solutions
- Organic Cleaning
- Hot Trichloroethylene or Xylene
- Mechanical Scrubbing, ultrasonic, gas jets
- Rinse in hot DI water
- Solution 1; 10-20 min at 80 C agitated (N2)
- 1 ml Ammonium Hydroxide
- 1 ml Hydrogren Peroxide
- 5-7 ml DI water
- Solution 2; 10-20 min at 80 C agitated (N2)
- 1 ml Hydrochloric Acid
- 1-2 ml Hydrogen Peroxide
- 6-8 ml DI water