Silicon Electrical Properties (Si)

Relative Permittivity 11.7
Permittivity 1.04e-10 F/m
Index of refraction 3.42
Band Gap 1.124 eV (1.170 at 0K)
Temperature dependence of band gap -2.3e-4 eV/K
n mobility 1350 (cm/s)/(V/cm)
p mobility 480 (cm/s)/(V/cm)
Field breakdown 3e7 V/m
Work function (intrinsic) 4.15 eV
Intrinsic carrier concentration (rt) 1.45e10 carriers/cm**3
Effective Density of States, conduction band 3.22e19/cm**3
Effective Density of States, valence band 1.83e19/cm**3
Effective mass (electrons) .26 m0
Effective mass (holes) .38 m0
Atomic density 4.995e22 atoms/cm**3
Intrinsic Debye length 24 microns
density of surface atoms
- (100) 6.78e14/cm**2
- (110) 9.59e14/cm**2
- (111) 7.83e14/cm**2
Atoms per unit cell 8
crystal structure: diamond
Intrinsic Resistivity 2.3e5 ohm-cm

Ionization Energies for Various Dopants